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BSZ040N04LSGXT PDF预览

BSZ040N04LSGXT

更新时间: 2024-11-20 13:00:47
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲光电二极管
页数 文件大小 规格书
9页 331K
描述
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BSZ040N04LSGXT 数据手册

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BSZ040N04LS G  
OptiMOS™3 Power-Transistor  
Product Summary  
Features  
V DS  
40  
V
• Fast switching MOSFET for SMPS  
• Optimized technology for DC/DC converters  
• Qualified according to JEDEC1) for target applications  
R DS(on),max  
I D  
4.0  
40  
m  
A
PG-TSDSON-8  
• N-channel; Logic level  
• Excellent gate charge x R DS(on) product (FOM)  
• Very low on-resistance R DS(on)  
• Superior thermal resistance  
• 100% Avalanche tested  
• Pb-free plating; RoHS compliant  
• Halogen-free according to IEC61249-2-21  
Type  
Package  
Marking  
BSZ040N04LS G  
PG-TSDSON-8  
040N04L  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol Conditions  
Unit  
I D  
V
V
GS=10 V, T C=25 °C  
Continuous drain current  
40  
40  
A
GS=10 V, T C=100 °C  
V
V
GS=4.5 V, T C=25 °C  
40  
40  
GS=4.5 V,  
T C=100 °C  
V
R
GS=10 V, T A=25 °C,  
18  
thJA=60 K/W2)  
Pulsed drain current3)  
I D,pulse  
I AS  
T C=25 °C  
160  
20  
Avalanche current, single pulse4)  
Avalanche energy, single pulse  
Gate source voltage  
T C=25 °C  
E AS  
V GS  
I D=20 A, R GS=25 Ω  
130  
±20  
mJ  
V
1) J-STD20 and JESD22  
Rev. 1.3  
page 1  
2009-11-05  

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