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BSS79B PDF预览

BSS79B

更新时间: 2024-11-26 22:39:39
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体开关晶体管
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5页 161K
描述
NPN Silicon Switching Transistors (High DC current gain Low collector-emitter saturation voltage)

BSS79B 数据手册

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NPN Silicon Switching Transistors  
BSS 79  
BSS 81  
High DC current gain  
Low collector-emitter saturation voltage  
Complementary types: BSS 80, BSS 82 (PNP)  
Package1)  
Type  
Marking  
Ordering Code  
(tape and reel)  
Pin Configuration  
1
2
3
BSS 79 B  
BSS 79 C  
BSS 81 B  
BSS 81 C  
CEs  
CFs  
CDs  
CGs  
Q62702-S503  
Q62702-S501  
Q62702-S555  
Q62702-S605  
B
E
C
SOT-23  
Maximum Ratings  
Parameter  
Symbol  
Values  
Unit  
BSS 79  
BSS 81  
Collector-emitter voltage  
Collector-base voltage  
Emitter-base voltage  
Collector current  
V
CE0  
CB0  
EB0  
40  
35  
V
V
75  
V
6
I
I
I
I
C
800  
1
mA  
A
Peak collector current  
Base current  
CM  
B
100  
200  
330  
150  
mA  
Peak base current  
BM  
Total power dissipation, T  
S
=77 ˚C  
Ptot  
mW  
˚C  
Junction temperature  
Tj  
Storage temperature range  
Tstg  
– 65 … + 150  
Thermal Resistance  
Junction - ambient2)  
R
th JA  
th JS  
290  
220  
K/W  
R
Junction - soldering point  
1)  
For detailed information see chapter Package Outlines.  
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.  
2)  
5.91  
Semiconductor Group  
1

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