BSS79B-CE

更新时间： 2024-11-24 03:22:55

品牌	Logo	应用领域
捷特科 - ZETEX		晶体开关晶体管局域网
页数	文件大小	规格书
1页	30K
描述
SOT23 NPN SILICON PLANAR SWITCHING TRANSISTOR

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数据手册

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BSS79B-CE 数据手册

SOT23 NPN SILICON PLANAR

SWITCHING TRANSISTOR

BSS79B

BSS79C

ISSUE 2 SEPTEMBER 95

✪

PARTMARKING DETAILS -

BSS79B - CE

BSS79C - CF

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_CM

VALUE

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

800

°C

Power Dissipation at T_amb=25°C

Operating and Storage Temperature Range

P_TOT

330

t_j:t_stg

-55 to +150

ELECTRICAL CHARACTERISTICS (at T

= 25°C).

amb

PARAMETER

SYMBOL MIN.

MAX. UNIT CONDITIONS.

Collector-Base Breakdown

Voltage

V_(BR)CBO

I_C=10µA

Collector-Emitter Breakdown

Voltage

V_(BR)CEO

I_C=10mA

Emitter-Base Breakdown Voltage V_(BR)EBO

IE=10µA

Collector Base Cut-Off Current

I_CBO

µA

V_CB=60V

V_CB=60V, T_amb=150 C

Emitter Base Cut-Off Current

I_EBO

V_BE=3.0V

Collector-Emitter Saturation

Voltage

V_CE(sat)

0.3

1.0

I_C=150mA, I_B=15mA

I_C=500mA, I_B=50mA

Static Forward

Current

Transfer Ratio

BSS79B

BSS79C

h_FE

f_T

100

120

300

I_C=150mA, V_CE=10V

I_C= 150mA, V_CE=10V

Transition Frequency

250

MHz

V_CE=20V, I_C=20mA

f=100MHz

Collector-Base Capacitance

Delay Time

C_obo

t_d

V_CB=10V, f=1MHz

225

V_CC=30V, I_C=150mA

I_B1=I_B2=15mA

Rise Time

t_r

Storage Time

Fall Time

t_s

V_CC=30V, I_C=150mA

_B1=I_B2=15mA

t_f

PAGE NUMBER

中文翻译

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