Datasheet > BSS80B

BSS80B

更新时间： 2024-10-02 06:44:23

品牌	Logo	应用领域
科信 - KEXIN		晶体开关晶体管光电二极管
页数	文件大小	规格书
2页	41K
描述
PNP Silicon Switching Transistors

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中文翻译

获取价格

数据手册

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BSS80B 数据手册

SMD Type

TransistIoCrs

PNP Silicon Switching Transistors

BSS80,BSS82

SOT-23

Unit: mm

+0.1

2.9

-0.1

+0.1

0.4

-0.1

Features

High DC current gain: 0.1mA to 500 mA.

Low collector-emitter saturation voltage.

+0.1

0.95

-0.1

+0.05

0.1

-0.01

+0.1

1.9

-0.1

1.Base

2.Emitter

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

Symbol

V^CEO

V^CBO

V^EBO

I^C

BSS80

BSS82

Unit

800

Peak collector current

Base current

I^CM

100

200

330

150

I^B

Peak base current

I^BM

Ptot

Total power dissipation,T^S= 77

Junction temperature

Storage temperature

Junction - soldering point

T^j

-65 to +150

220

Tstg

RthJS

K/W

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