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BSS79C

更新时间： 2024-11-25 03:22:55
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体放大器晶体管开关光电二极管
页数 文件大小 规格书
4页 49K
描述
NPN General Purpose Amplifier

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中文翻译

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BSS79C 数据手册

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BSS79C  
NPN General Purpose Amplifier  
•
This device is for use as a medium power amplifier and swith requiring  
collector currents up to 500mA.  
C
•
•
Sourced from process 19.  
See BCW65C for characteristics.  
E
SOT-23  
B
Mark: CF  
Absolute Maximum Ratings * T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Value  
40  
Units  
V
V
V
V
Collector-Emitter Voltage  
CEO  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current  
75  
V
CBO  
EBO  
6.0  
V
I
- Continuous  
800  
mA  
°C  
C
T , T  
Operating and Storage Junction Temperature Range  
-55 ~ +150  
J
STG  
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1. These ratings are based on a maximum junction temperature of 150 degrees C.  
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Electrical Characteristics T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Test Condition  
Min.  
Max.  
Units  
Off Characteristics  
V
V
V
Collector-Emitter Breakdown Voltage  
Collector-Base Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector-Cutoff Current  
I
= 10mA, I = 0  
75  
40  
V
V
V
(BR)CEO  
(BR)CBO  
(BR)EBO  
CBO  
C
B
I
I
= 10µA, I = 0  
E
C
E
= 10µA, I = 0  
6.0  
C
I
V
V
= 60V  
= 60V, T = 150°C  
10  
10  
nA  
µA  
CB  
CB  
a
I
Emitter-Cutoff Current  
V
= 3.0V, I = 0  
10  
nA  
EBO  
EB  
C
On Characteristics *  
h
DC Current Gain  
I
= 150mA, V = 10V  
100  
300  
FE  
C
CE  
V
Collector-Emitter Saturation Voltage  
I
= 150mA, I = 15mA  
= 500mA, I = 50mA  
B
0.3  
1.0  
V
V
CE(sat)  
C
B
I
C
Small Signal Characteristics  
f
Current Gain - Bandwidth Product  
Collector-Base Capacitance  
I
= 20mA, V = 20V, f = 100MHz  
250  
8.0  
MHz  
pF  
T
C
CE  
C
V
= 10V, I = 0, f = 1.0MHz  
E
CB  
CB  
Switching Characteristics  
t
t
t
t
Delay Time  
Rise Time  
Storage Time  
Fall Time  
V
= 30V, V  
= 150mA, I = 15mA  
B1  
= 0.5V,  
BE(OFF)  
10  
10  
ns  
ns  
ns  
ns  
d
r
CC  
I
C
V
= 30V, I = 150mA,  
265  
60  
s
f
CC  
C
I
= I = 15mA  
B2  
B1  
©2004 Fairchild Semiconductor Corporation  
Rev. A, June 2004  
1234

中文翻译

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BSS79C 替代型号

型号 品牌 替代类型 描述 数据表
BSR14 FAIRCHILD

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