Datasheet > BSS806NEH6327XTSA1

BSS806NEH6327XTSA1

更新时间： 2024-11-28 04:08:15

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	567K
描述
Small Signal Field-Effect Transistor, 2.3A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

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BSS806NE

OptiMOS^™2 Small-Signal-Transistor

Features

Product Summary

V_DS

2.3

• N-channel

R_DS(on),max

V_GS=2.5 V

V_GS=1.8 V

• Enhancement mode

• Ultra Logic level (1.8V rated)

I_D

• ESD protected

• Avalanche rated

• Qualified according to AEC Q101

• 100% lead-free; RoHS compliant

• Halogen-free according to IEC61249-2-21

PG-SOT23

Type

Package

SOT23

Tape and Reel

Marking

YIs

Halogen Free

Yes

Packing

Non dry

BSS806NE

H6327: 3000 pcs/ reel

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol Conditions

Unit

I _D

T _A=25 °C

T _A=70 °C

T _A=25 °C

Continuous drain current

2.3

1.9

9.3

I _D,pulse

Pulsed drain current

E _AS

I _D=2.3 A, R _GS=25 W

Avalanche energy, single pulse

10.8

I _D=2.3 A, V _DS=16 V,

di /dt =200 A/µs,

T _j,max=150 °C

Reverse diode dv /dt

dv /dt

kV/µs

V _GS

Gate source voltage

±8

0.5

Power dissipation¹⁾

P _tot

T _A=25 °C

°C

T _j, T _stg

Operating and storage temperature

ESD Class

-55 ... 150

1C(1kV to 2kV)

260 °C

JESD22-A114 -HBM

Soldering Temperature

IEC climatic category; DIN IEC 68-1

55/150/56

Rev 2.01

page 1

2014-01-16

12 3 4 5 6 7...9

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