Datasheet > BSS816NW H6327

BSS816NW H6327

更新时间： 2024-11-30 10:55:27

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	182K
描述
Small Signal Field-Effect Transistor, 1.4A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3

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BSS816NW H6327 数据手册

BSS816NW

OptiMOS™2 Small-Signal-Transistor

Features

Product Summary

V _DS

160

240

1.4

• N-channel

R _DS(on),max

V _GS=2.5 V

V _GS=1.8 V

mΩ

• Enhancement mode

• Ultra Logic level (1.8V rated)

I _D

• Avalanche rated

• Qualified according to AEC Q101

• 100% lead-free; RoHS compliant

• Halogen-free according to IEC61249-2-21

PG-SOT323

Type

Package

Tape and Reel Information

Marking

Lead Free

Packing

BSS816NW PG-SOT323 H6327: 3000 pcs/ reel

XCs

Yes

Non dry

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol Conditions

Unit

I _D

T _A=25 °C

T _A=70 °C

T _A=25 °C

Continuous drain current

1.4

1.1

5.6

I _D,pulse

Pulsed drain current

E _AS

I _D=1.4 A, R _GS=25 Ω

Avalanche energy, single pulse

3.7

I _D=1.4 A, V _DS=16 V,

di /dt =200 A/µs,

Reverse diode dv /dt

dv /dt

kV/µs

_j,max=150 °C

V _GS

Gate source voltage

±8

Power dissipation¹⁾

P _tot

T _A=25 °C

0.5

°C

T _j, T _stg

Operating and storage temperature

ESD Class

-55 ... 150

0 (<250V)

260 °C

JESD22-A114 -HBM

Soldering Temperature

IEC climatic category; DIN IEC 68-1

55/150/56

Rev 2.3

page 1

2011-07-13

12 3 4 5 6 7...9

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