是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | SMALL OUTLINE, R-PDSO-G3 | 针数: | 3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.7 | 其他特性: | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 20 V |
最大漏极电流 (ID): | 1.4 A | 最大漏源导通电阻: | 160 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | 最大反馈电容 (Crss): | 10 pF |
JESD-30 代码: | R-PDSO-G3 | JESD-609代码: | e3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
最低工作温度: | -55 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL | 功耗环境最大值: | 0.5 W |
最大功率耗散 (Abs): | 0.5 W | 表面贴装: | YES |
端子面层: | Matte Tin (Sn) | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BSS816NWH6327XTSA1 | INFINEON |
获取价格 |
Small Signal Field-Effect Transistor, 1.4A I(D), 20V, 1-Element, N-Channel, Silicon, Metal | |
BSS816NWL6327 | INFINEON |
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Small Signal Field-Effect Transistor, 1.4A I(D), 20V, 1-Element, N-Channel, Silicon, Metal | |
BSS81B | KEXIN |
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NPN Silicon Switching Transistors | |
BSS81B | TYSEMI |
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High DC current gain: 0.1mA to 500 mA. Low collector-emitter saturation voltage. | |
BSS81B | INFINEON |
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NPN Silicon Switching Transistors (High DC current gain Low collector-emitter saturation v | |
BSS81C | INFINEON |
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NPN Silicon Switching Transistors (High DC current gain Low collector-emitter saturation v | |
BSS81C | KEXIN |
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NPN Silicon Switching Transistors | |
BSS82 | KEXIN |
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PNP Silicon Switching Transistors | |
BSS82 | TYSEMI |
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High DC current gain: 0.1mA to 500 mA. Low collector-emitter saturation voltage. | |
BSS82 | INFINEON |
获取价格 |
PNP Silicon Switching Transistors |