Datasheet > BSS138W_14

BSS138W_14

更新时间： 2022-02-26 14:36:38

品牌	Logo	应用领域
强茂 - PANJIT		/
页数	文件大小	规格书
7页	216K
描述
50V N-Channel Enhancement Mode MOSFET - ESD Protected

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BSS138W_14 数据手册

BSS138W

50V N-Channel Enhancement Mode MOSFET - ESD Protected

Unit：inch(mm)

SOT-323

FEATURES

• R_DS(ON), V_GS@10V,I_DS@500mA=3Ω

• R_DS(ON), V_GS@4.5V,I_DS@200mA=4Ω

• R_DS(ON), V_GS@2.5V,I_DS@100mA=6Ω

0.087(2.20)

0.070(1.80)

• Advanced Trench Process Technology

• High Density Cell Design For Ultra Low On-Resistance

• Very Low Leakage Current In Off Condition

• Specially Designed for Battery Operated Systems, Solid-State Relays

Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.

0.054(1.35)

0.045(1.15)

0.006(0.15)

0.002(0.05)

0.056(1.40)

0.047(1.20)

• ESD Protected

• Lead free in comply with EU RoHS 2002/95/EC directives.

• Green molding compound as per IEC61249 Std. . (Halogen Free)

0.004(0.10)MAX.

0.044(1.10)

0.035(0.90)

MECHANICAL DATA

• Case: SOT-323 Package

0.016(0.40)

0.008(0.20)

• Terminals : Solderable per MIL-STD-750,Method 2026

• Marking : 38W

• Apporx. Weight: 0.0002 ounces, 0.005 grams

Maximum Ratings and Thermal Characteristics (T_A=25^OC unless otherwise noted )

PARAMETER

Drain-Source Voltage

Symbol

V_DS

Limit

Units

+20

300

2000

Gate-Source Voltage

V_GS

I_D

Continuous Drain Current

Pulsed Drain Current

I_DM

T_A=25^OC

T_A=75^OC

350

210

Maximum Power Dissipation

P_D

Operating Junction and Storage Temperature

Range

T_J,T_STG

R_θJA

-55 to + 150

357

^OC

Junction-to Ambient Thermal Resistance(PCB mounted)²

^OC/W

Note: 1. Maximum DC current limited by the package

2. Surface mounted on FR4 board, t < 5 sec

PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE

November 09,2010-REV.01

PAGE . 1

12 3 4 5 6 7

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