型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BSS139_09 | INFINEON |
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SIPMOS Small-Signal-Transistor | |
BSS139E6327 | INFINEON |
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Small Signal Field-Effect Transistor, 0.1A I(D), 250V, 1-Element, N-Channel, Silicon, Meta | |
BSS139E7941 | INFINEON |
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Small Signal Field-Effect Transistor, 0.04A I(D), 250V, 1-Element, N-Channel, Silicon, Met | |
BSS139H6327 | INFINEON |
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Small Signal Field-Effect Transistor, 0.1A I(D), 250V, 1-Element, N-Channel, Silicon, Meta | |
BSS139I | INFINEON |
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N-沟道耗尽模式 MOSFET BSP135I 采用 SOT-223 封装,其特性为 VD | |
BSS139L6906 | INFINEON |
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Small Signal Field-Effect Transistor, 0.1A I(D), 250V, 1-Element, N-Channel, Silicon, Meta | |
BSS139Z | UTC |
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0.2A, 50V N-CHANNEL POWER MOSFET | |
BSS139ZG-AE2-R | UTC |
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0.2A, 50V N-CHANNEL POWER MOSFET | |
BSS139ZL-AE2-R | UTC |
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Small Signal Field-Effect Transistor, 0.2A I(D), 50V, 1-Element, N-Channel, Silicon, Metal | |
BSS145 | INFINEON |
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SIPMOS Small-Signal Transistor (N channel Enhancement mode) |