BSS138W
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
Mechanical Data
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•
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Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Lead Free/RoHS Compliant (Note 4)
"Green" Device (Note 5 and 6)
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•
Case: SOT-323
Case Material: Molded Plastic, "Green" Molding Compound,
Note 6. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
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Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.006 grams (approximate)
Drain
SOT-323
D
Gate
TOP VIEW
G
S
Source
Equivalent Circuit
TOP VIEW
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Symbol
VDSS
VDGR
VGSS
ID
Value
50
Units
V
Drain-Gate Voltage (Note 1)
50
V
Gate-Source Voltage
Drain Current (Note 2)
Continuous
Continuous
V
±20
200
mA
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Total Power Dissipation (Note 2)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
Pd
RθJA
Value
200
625
Units
mW
°C/W
°C
-55 to +150
Tj, TSTG
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 3)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Symbol Min
Typ Max Unit
Test Condition
VGS = 0V, ID = 250μA
VDS = 50V, VGS = 0V
VGS = ±20V, VDS = 0V
50
⎯
⎯
75
⎯
⎯
V
µA
nA
BVDSS
IDSS
IGSS
⎯
0.5
±100
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
0.5
⎯
100
1.2
1.4
⎯
1.5
3.5
⎯
V
Ω
mS
VGS(th)
RDS (ON)
gFS
VDS = VGS, ID = 250μA
VGS = 10V, ID = 0.22A
VDS = 25V, ID = 0.2A, f = 1.0KHz
50
25
8.0
pF
pF
pF
Ciss
Coss
Crss
⎯
⎯
⎯
⎯
⎯
⎯
Output Capacitance
VDS = 10V, VGS = 0V, f = 1.0MHz
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
20
20
ns
ns
tD(ON)
tD(OFF)
⎯
⎯
⎯
⎯
VDD = 30V, ID = 0.2A,
RGEN = 50Ω
Turn-Off Delay Time
Notes:
1.
R
GS
≤ 20KΩ.
2. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
3. Short duration pulse test used to minimize self-heating effect.
4. No purposefully added lead.
5. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
6. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
1 of 4
www.diodes.com
October 2007
© Diodes Incorporated
BSS138W
Document number: DS30206 Rev. 9 - 2
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