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BSS145 PDF预览

BSS145

更新时间: 2024-11-17 22:48:31
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管
页数 文件大小 规格书
8页 141K
描述
SIPMOS Small-Signal Transistor (N channel Enhancement mode)

BSS145 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SOT-23包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.31配置:SINGLE
最小漏源击穿电压:65 V最大漏极电流 (ID):0.22 A
最大漏源导通电阻:3.5 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G3JESD-609代码:e0
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):0.36 W
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
Base Number Matches:1

BSS145 数据手册

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BSS 145  
®
SIPMOS Small-Signal Transistor  
• N channel  
• Enhancement mode  
V  
= 1.4 ...2.3 V  
GS(th)  
Pin 1  
G
Pin 2  
S
Pin 3  
D
Type  
V
I
R
DS(on)  
Package  
Marking  
DS  
D
BSS 145  
65 V  
0.22 A  
3.5 Ω  
SOT-23  
SBs  
Type  
Ordering Code  
Tape and Reel Information  
BSS 145  
Q67000-S132  
E6327  
Maximum Ratings  
Parameter  
Symbol  
Values  
Unit  
Drain source voltage  
Drain-gate voltage  
V
V
65  
V
DS  
DGR  
R
= 20 k  
65  
GS  
±
14  
Gate source voltage  
V
V
GS  
Gate-source peak voltage,aperiodic  
Continuous drain current  
± 20  
0.22  
0.88  
0.36  
gs  
I
A
D
T = 31 °C  
A
DC drain current, pulsed  
I
Dpuls  
T = 25 °C  
A
Power dissipation  
P
W
tot  
T = 25 °C  
A
Semiconductor Group  
1
Sep-13-1996  

BSS145 替代型号

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2N7002-7-F DIODES

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N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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