Datasheet > BSS159N

BSS159N

更新时间： 2024-11-18 12:56:15

品牌	Logo	应用领域
TYSEMI		晶体晶体管光电二极管
页数	文件大小	规格书
3页	546K
描述
SIPMOS Small-Signal-Transistor

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数据手册

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BSS159N 数据手册

SMD Type

Product specification

BSS159N

SIPMOS^®Small-Signal-Transistor

Product Summary

V _DS

Features

Ω

• N-channel

• Depletion mode

R _DS(on),max

I _DSS,min

0.13

• dv /dt rated

SOT-23

Type

Package

Ordering Code Tape and Reel Information

Q67042-S1488 E6327: 3000 pcs/reel

Marking

BSS159N

SOT-23

SGs

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol Conditions

Unit

I _D

T _A=25 °C

T _A=70 °C

T _A=25 °C

Continuous drain current

0.23

0.18

0.92

I _D,pulse

dv /dt

V _GS

Pulsed drain current

Reverse diode dv /dt

Gate source voltage

I _D=0.23 A, V _DS=60 V,

di /dt =200 A/µs,

T _j,max=150 °C

kV/µs

±20

ESD sensitivity (HBM) as per

MIL-STD 883

Class 1

P _tot

T _A=25 °C

Power dissipation

0.36

T _j, T _stg

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

-55 ... 150

55/150/56

°C

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