Datasheet > BSS159NE6327

BSS159NE6327

更新时间： 2024-11-18 15:28:47

品牌	Logo	应用领域
英飞凌 - INFINEON		光电二极管
页数	文件大小	规格书
9页	305K
描述
Small Signal Field-Effect Transistor, 0.23A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3

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技术参数
数据手册

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BSS159NE6327 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	SMALL OUTLINE, R-PDSO-G3	针数：	3
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8541.21.00.95	风险等级：	5.13
Base Number Matches：	1

BSS159NE6327 数据手册

BSS159N

SIPMOS^®Small-Signal-Transistor

Product Summary

V _DS

Features

Ω

• N-channel

• Depletion mode

R _DS(on),max

I _DSS,min

0.13

• dv /dt rated

• Available with V _GS(th)indicator on reel

• Pb-free lead-plating; RoHS compliant

SOT-23

Type

Package

Pb-free Tape and Reel Information

Marking

SGs

BSS159

PG-SOT-23 Yes

L6327: 3000 pcs/reel

L6906: 3000 pcs/reel sorted in V _GS(th)bands¹⁾

SGs

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol Conditions

Unit

I _D

T _A=25 °C

T _A=70 °C

T _A=25 °C

Continuous drain current

0.23

0.18

0.92

I _D,pulse

dv /dt

V _GS

Pulsed drain current

Reverse diode dv /dt

Gate source voltage

I _D=0.23 A, V _DS=60 V,

di /dt =200 A/µs,

kV/µs

_j,max=150 °C

±20

Class 0

0.36

ESD sensitivity (HBM) as per

MIL-STD 883

P _tot

T _A=25 °C

Power dissipation

T _j, T _stg

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

-55 ... 150

55/150/56

°C

¹⁾see table on next page and diagram 11

Rev. 1.32

page 1

2006-12-11

12 3 4 5 6 7...9

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