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BSS145E6327 PDF预览

BSS145E6327

更新时间: 2024-11-05 21:15:31
品牌 Logo 应用领域
英飞凌 - INFINEON 光电二极管晶体管
页数 文件大小 规格书
7页 91K
描述
Small Signal Field-Effect Transistor, 0.22A I(D), 65V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN

BSS145E6327 技术参数

生命周期:Obsolete零件包装代码:SOT-23
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.2
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:65 V
最大漏极电流 (ID):0.22 A最大漏源导通电阻:3.5 Ω
FET 技术:METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss):8 pF
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管元件材料:SILICONBase Number Matches:1

BSS145E6327 数据手册

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BSS 145  
®
SIPMOS Small-Signal Transistor  
• N channel  
• Enhancement mode  
V  
= 1.4 ...2.3 V  
GS(th)  
Pin 1  
G
Pin 2  
S
Pin 3  
D
Type  
Package  
Marking  
VDS  
ID  
RDS(on)  
3.5  
BSS 145  
65 V  
0.22 A  
SOT-23  
SBs  
Type  
Ordering Code  
Q67000-S132  
Tape and Reel Information  
BSS 145  
E6327  
Maximum Ratings  
Parameter  
Symbol  
Values  
Unit  
Drain source voltage  
Drain-gate voltage  
V
65  
V
DS  
V
DGR  
R
= 20 k  
65  
GS  
±
20  
Gate source voltage  
V
GS  
ESD Sensitivity (HBM) as per MIL-STD 883  
Continuous drain current  
Class 1  
0.22  
I
A
D
T = 31 ˚C  
A
DC drain current, pulsed  
I
Dpuls  
T = 25 ˚C  
0.88  
A
Power dissipation  
P
W
tot  
T = 25 ˚C  
0.36  
A
Data Sheet  
1
05.99  

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