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BSS149E-6288 PDF预览

BSS149E-6288

更新时间: 2024-11-18 14:41:11
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体管
页数 文件大小 规格书
1页 38K
描述
Small Signal Field-Effect Transistor, 0.35A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92

BSS149E-6288 技术参数

生命周期:Obsolete包装说明:CYLINDRICAL, O-PBCY-T3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.32
Is Samacsys:N配置:SINGLE
最小漏源击穿电压:200 V最大漏极电流 (ID):0.35 A
最大漏源导通电阻:3.5 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
元件数量:1端子数量:3
工作模式:DEPLETION MODE封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:BOTTOM晶体管元件材料:SILICON
Base Number Matches:1

BSS149E-6288 数据手册

  

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