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BSP41 PDF预览

BSP41

更新时间: 2024-09-16 22:39:39
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体放大器晶体管开关功率放大器光电二极管
页数 文件大小 规格书
4页 76K
描述
MEDIUM POWER AMPLIFIER

BSP41 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:SMALL OUTLINE, R-PDSO-G4针数:4
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.75风险等级:5.14
外壳连接:COLLECTOR最大集电极电流 (IC):1 A
集电极-发射极最大电压:60 V配置:SINGLE
最小直流电流增益 (hFE):50JESD-30 代码:R-PDSO-G4
JESD-609代码:e3元件数量:1
端子数量:4最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:NPN
最大功率耗散 (Abs):1.5 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):100 MHz
Base Number Matches:1

BSP41 数据手册

 浏览型号BSP41的Datasheet PDF文件第2页浏览型号BSP41的Datasheet PDF文件第3页浏览型号BSP41的Datasheet PDF文件第4页 
BSP40/41  
BSP42/43  
MEDIUM POWER AMPLIFIER  
ADVANCE DATA  
SILICON EPITAXIAL PLANAR NPN  
TRANSISTORS  
MINIATURE PLASTIC PACKAGE FOR  
APPLICATION IN SURFACE MOUNTING  
CIRCUITS  
GENERAL PURPOSE MAINLY INTENDED  
FOR USE IN MEDIUM POWER INDUSTRIAL  
APPLICATION AND FOR AUDIO AMPLIFIER  
OUTPUT STAGE  
PNP COMPLEMENTS ARE BSP30, BSP31,  
BSP32 AND BSP33 RESPECTIVELY  
2
3
2
1
SOT-223  
INTERNAL SCHEMATIC DIAGRAM  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
BSP40/BSP41  
BSP42/BSP43  
VCBO  
VCEO  
VCES  
VEBO  
IC  
Collector-Base Voltage (IE = 0)  
Collector-Emitter Voltage (IB = 0)  
Collector-Emitter Voltage (VBE = 0)  
Emitter-Base Voltage (IC = 0)  
Collector Current  
70  
60  
70  
90  
80  
90  
V
V
V
5
1
V
A
IB  
Base Current  
0.1  
2
A
o
Ptot  
Tstg  
Tj  
Total Dissipation at Tc = 25 C  
W
oC  
oC  
Storage Temperature  
-65 to 150  
150  
Max. Operating Junction Temperature  
1/4  
October 1995  

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