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BSP42

更新时间: 2024-01-01 21:09:02
品牌 Logo 应用领域
捷特科 - ZETEX 晶体晶体管局域网
页数 文件大小 规格书
1页 38K
描述
NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

BSP42 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.24外壳连接:COLLECTOR
最大集电极电流 (IC):1 A集电极-发射极最大电压:80 V
配置:SINGLE最小直流电流增益 (hFE):40
JESD-30 代码:R-PDSO-G4元件数量:1
端子数量:4封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICON最大关闭时间(toff):1000 ns
最大开启时间(吨):250 nsVCEsat-Max:0.5 V
Base Number Matches:1

BSP42 数据手册

  
SOT223 NPN SILICON PLANAR  
MEDIUM POWER TRANSISTOR  
BSP42  
ISSUE 4 – MARCH 2001  
C
COMPLEMENTARY TYPE –  
BSP32  
BSP42  
E
PARTMARKING DETAIL –  
C
B
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
VALUE  
UNIT  
V
Collector-Base Voltage  
90  
Collector-Emitter Voltage  
Emitter-Base Voltage  
80  
V
5
V
Peak Pulse Current  
2
A
Continuous Collector Current  
Base Current  
IC  
1
A
IB  
100  
2
mA  
W
°C  
Power Dissipation at Tamb=25°C  
Operating and Storage Temperature Range  
Ptot  
Tj:Tstg  
-55 to +150  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C unless otherwise stated).  
amb  
PARAMETER  
SYMBOL MIN.  
MAX.  
UNIT  
CONDITIONS.  
Collector-Base  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
90  
80  
5
V
IC=100µA  
Breakdown Voltage  
Collector-Emitter  
Breakdown Voltage  
V
V
IC=10mA  
IE=10µA  
VCB=60V  
Emitter-Base  
Breakdown Voltage  
Collector Cut-Off  
Current  
100  
50  
nA  
µA  
V
CB=60V, Tamb=125°C  
Collector-Emitter  
VCE(sat)  
VBE(sat)  
hFE  
0.25  
0.5  
V
V
IC =150mA, IB=15mA  
Saturation Voltage  
IC =500mA, IB=50mA  
Base-Emitter  
Saturation Voltage  
1.0  
1.2  
V
V
IC =150mA, IB=15mA  
I
C =500mA, IB=50mA  
Static Forward  
Current Transfer Ratio  
10  
40  
30  
I
I
I
C =100µA, VCE=5V  
C =100mA, VCE=5V  
C =500mA, VCE=5V  
120  
Output Capacitance  
Input Capacitance  
Transition Frequency  
Cobo  
Cibo  
fT  
12  
90  
pF  
VCB =10V, f =1MHz  
VEB =0.5V, f=1MHz  
pF  
100  
MHz  
IC=50mA, VCE=10V  
f =35MHz  
Turn-On Time  
Turn-Off Time  
Ton  
Toff  
250  
ns  
ns  
VCC =20V, IC =100mA  
I
B1 =-IB2 =-5mA  
1000  
*Measured under pulsed conditions.  
For typical characteristics graphs see FMMT493 datasheet.  
TBA  

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