Datasheet > BSN20_00

BSN20_00

更新时间： 2024-10-14 03:22:51

品牌	Logo	应用领域
恩智浦 - NXP		晶体晶体管
页数	文件大小	规格书
13页	298K
描述
N-channel enhancement mode field-effect transistor

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BSN20_00 数据手册

BSN20

N-channel enhancement mode ﬁeld-effect transistor

Rev. 03 — 26 June 2000

Product speciﬁcation

1. Description

N-channel enhancement mode ﬁeld-effect transistor in a plastic package using

TrenchMOS™¹technology.

Product availability:

BSN20 in SOT23.

2. Features

■ TrenchMOS™ technology

■ Very fast switching

■ Logic level compatible

■ Subminiature surface mount package.

3. Applications

■ Relay driver

■ High speed line driver

■ Logic level translator.

4. Pinning information

Table 1: Pinning - SOT23, simpliﬁed outline and symbol

Description

gate (g)

Simpliﬁed outline

Symbol

source (s)

drain (d)

03ab44

03ab30

SOT23

N-channel MOSFET

1. TrenchMOS is a trademark of Royal Philips Electronics.

12 3 4 5 6 7...13

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型号	品牌	获取价格	描述	数据表
BSN204	NXP	获取价格	TRANSISTOR 250 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92, FET General Purpose
BSN204A	PHILIPS	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
BSN204A-AMMO	NXP	获取价格	TRANSISTOR 250 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92, FET General Purpose
BSN204-AMMO	NXP	获取价格	TRANSISTOR 250 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92, FET General Purpose
BSN204A-T/R	NXP	获取价格	TRANSISTOR 250 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92, FET General Purpose
BSN204-T/R	NXP	获取价格	TRANSISTOR 250 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92, FET General Purpose
BSN205	NXP	获取价格	N-channel enhancement mode vertical D-MOS transistor
BSN205A	NXP	获取价格	N-channel enhancement mode vertical D-MOS transistor
BSN205A	PHILIPS	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
BSN20-7	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE FIELD MOSFET