是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Transferred | 零件包装代码: | SOT-23 |
包装说明: | PLASTIC, SOT-23, 3 PIN | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.95 | 风险等级: | 5.07 |
其他特性: | LOGIC LEVEL COMPATIBLE | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 12 V | 最大漏极电流 (Abs) (ID): | 0.75 A |
最大漏极电流 (ID): | 0.75 A | 最大漏源导通电阻: | 0.5 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-G3 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | P-CHANNEL | 最大功率耗散 (Abs): | 0.417 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | YES | 端子面层: | Tin (Sn) |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 30 | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BSH205,215 | NXP |
获取价格 |
P-channel vertical D-MOS logic level FET TO-236 3-Pin | |
BSH205/T1 | NXP |
获取价格 |
TRANSISTOR MOSFET SOT-23 | |
BSH205/T3 | NXP |
获取价格 |
TRANSISTOR 750 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Si | |
BSH205G2 | NXP |
获取价格 |
2000mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, PLASTIC PACAKGE-3 | |
BSH205G2 | NEXPERIA |
获取价格 |
20 V, P-channel Trench MOSFETProduction | |
BSH205G2A | NEXPERIA |
获取价格 |
20 V, P-channel Trench MOSFETProduction | |
BSH205G2R | NXP |
获取价格 |
BSH205G2 - 20 V, P-channel Trench MOSFET TO-236 3-Pin | |
BSH205T/R | NXP |
获取价格 |
TRANSISTOR 750 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Si | |
BSH206 | NXP |
获取价格 |
P-channel enhancement mode MOS transistor | |
BSH206/T3 | NXP |
获取价格 |
TRANSISTOR 750 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SC-88, 6 PIN, FET General Pu |