5秒后页面跳转
BSH207 PDF预览

BSH207

更新时间: 2024-11-15 22:27:55
品牌 Logo 应用领域
恩智浦 - NXP 晶体晶体管
页数 文件大小 规格书
7页 159K
描述
P-channel enhancement mode MOS transistor

BSH207 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:SC-74
包装说明:SMALL OUTLINE, R-PDSO-G6针数:6
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.73
其他特性:LOGIC LEVEL COMPATIBLE配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:12 V最大漏极电流 (ID):1.52 A
最大漏源导通电阻:0.15 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G6JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:6工作模式:ENHANCEMENT MODE
最高工作温度:150 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:P-CHANNEL功耗环境最大值:0.7 W
最大功率耗散 (Abs):0.8 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

BSH207 数据手册

 浏览型号BSH207的Datasheet PDF文件第2页浏览型号BSH207的Datasheet PDF文件第3页浏览型号BSH207的Datasheet PDF文件第4页浏览型号BSH207的Datasheet PDF文件第5页浏览型号BSH207的Datasheet PDF文件第6页浏览型号BSH207的Datasheet PDF文件第7页 
Philips Semiconductors  
Product specification  
P-channel enhancement mode  
MOS transistor  
BSH207  
FEATURES  
SYMBOL  
QUICK REFERENCE DATA  
s
• Very low threshold voltage  
• Fast switching  
VDS = -12 V  
• Logic level compatible  
• Subminiature surface mount  
package  
ID = -1.52 A  
g
R
DS(ON) 0.15 (VGS = -2.5 V)  
VGS(TO) 0.4 V  
d
GENERAL DESCRIPTION  
PINNING  
SOT457  
P-channel, enhancement mode,  
logic level, field-effect power  
transistor. This device has low  
threshold voltage and extremely  
fast switching making it ideal for  
battery powered applications and  
high speed digital interfacing.  
PIN  
DESCRIPTION  
6
5
4
1,2,5,6 drain  
Top view  
3
4
gate  
source  
1
2
3
The BSH207 is supplied in the  
SOT457 subminiature surface  
mounting package.  
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134)  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
VDS  
VDGR  
VGS  
ID  
Drain-source voltage  
-
-
-
-
-
-
-
-
-12  
-12  
± 8  
-1.52  
-0.96  
-6.09  
0.417  
0.17  
150  
V
V
V
A
A
Drain-gate voltage  
Gate-source voltage  
Drain current (DC)  
RGS = 20 kΩ  
Ta = 25 ˚C  
Ta = 100 ˚C  
Ta = 25 ˚C  
Ta = 25 ˚C  
Ta = 100 ˚C  
IDM  
Ptot  
Drain current (pulse peak value)  
Total power dissipation  
A
W
W
˚C  
Tstg, Tj  
Storage & operating temperature  
- 55  
THERMAL RESISTANCES  
SYMBOL PARAMETER  
CONDITIONS  
TYP.  
MAX.  
UNIT  
Rth j-a  
Thermal resistance junction to  
ambient  
FR4 board, minimum  
footprint  
300  
-
K/W  
August 1998  
1
Rev 1.000  

与BSH207相关器件

型号 品牌 获取价格 描述 数据表
BSH207,135 NXP

获取价格

BSH207 - P-channel vertical D-MOS logic level FET TSOP 6-Pin
BSH207/T3 NXP

获取价格

TRANSISTOR 1520 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SC-74, 6 PIN, FET General P
BSH299 PHILIPS

获取价格

Transistor
BSH299 NXP

获取价格

P-channel enhancement mode MOS transistor
BSH299115 NXP

获取价格

TRANSISTOR 200 mA, 50 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Si
BSH299135 NXP

获取价格

TRANSISTOR 200 mA, 50 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Si
BSH301 NXP

获取价格

Dual N-channel enhancement mode MOS transistor
BSHORTNOSE ETC

获取价格

Tools for Telecom, Fiber Optics, CATV, Satellite, Security & Alarm, Wireless and Electroni
BSI VISHAY

获取价格

Molded and Insulated Wirewound Power Resistors Axial Leads
BSI05810020DR17 VISHAY

获取价格

Molded and Insulated Wirewound Power Resistors Axial Leads