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BSH299 PDF预览

BSH299

更新时间: 2024-11-16 20:20:19
品牌 Logo 应用领域
飞利浦 - PHILIPS 开关光电二极管晶体管
页数 文件大小 规格书
12页 72K
描述
Transistor

BSH299 技术参数

是否Rohs认证: 不符合生命周期:Transferred
包装说明:,Reach Compliance Code:unknown
风险等级:5.69Is Samacsys:N
配置:SingleFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-609代码:e0工作模式:ENHANCEMENT MODE
最高工作温度:150 °C极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):0.98 W子类别:Other Transistors
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
Base Number Matches:1

BSH299 数据手册

 浏览型号BSH299的Datasheet PDF文件第2页浏览型号BSH299的Datasheet PDF文件第3页浏览型号BSH299的Datasheet PDF文件第4页浏览型号BSH299的Datasheet PDF文件第5页浏览型号BSH299的Datasheet PDF文件第6页浏览型号BSH299的Datasheet PDF文件第7页 
DISCRETE SEMICONDUCTORS  
DATA SHEET  
BSH299  
P-channel enhancement mode  
MOS transistor  
1998 Feb 18  
Objective specification  
File under Discrete Semiconductors, SC13b  

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