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BSH299 PDF预览

BSH299

更新时间: 2024-11-15 22:27:55
品牌 Logo 应用领域
恩智浦 - NXP 晶体小信号场效应晶体管开关光电二极管
页数 文件大小 规格书
12页 97K
描述
P-channel enhancement mode MOS transistor

BSH299 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G6
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.75其他特性:LOW THRESHOLD
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:50 V
最大漏极电流 (ID):0.2 A最大漏源导通电阻:10 Ω
FET 技术:METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss):12 pF
JESD-30 代码:R-PDSO-G6元件数量:1
端子数量:6工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):0.98 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

BSH299 数据手册

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DISCRETE SEMICONDUCTORS  
DATA SHEET  
BSH299  
P-channel enhancement mode  
MOS transistor  
1998 Feb 18  
Objective specification  
File under Discrete Semiconductors, SC13b  

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