生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-G6 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.75 | 其他特性: | LOW THRESHOLD |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 50 V |
最大漏极电流 (ID): | 0.2 A | 最大漏源导通电阻: | 10 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | 最大反馈电容 (Crss): | 12 pF |
JESD-30 代码: | R-PDSO-G6 | 元件数量: | 1 |
端子数量: | 6 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | P-CHANNEL | 最大功率耗散 (Abs): | 0.98 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BSH299115 | NXP |
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TRANSISTOR 200 mA, 50 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Si | |
BSH299135 | NXP |
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TRANSISTOR 200 mA, 50 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Si | |
BSH301 | NXP |
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Dual N-channel enhancement mode MOS transistor | |
BSHORTNOSE | ETC |
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Tools for Telecom, Fiber Optics, CATV, Satellite, Security & Alarm, Wireless and Electroni | |
BSI | VISHAY |
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Molded and Insulated Wirewound Power Resistors Axial Leads | |
BSI05810020DR17 | VISHAY |
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Molded and Insulated Wirewound Power Resistors Axial Leads | |
BSI05810020DR19 | VISHAY |
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Molded and Insulated Wirewound Power Resistors Axial Leads | |
BSI05810020DR22 | VISHAY |
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Molded and Insulated Wirewound Power Resistors Axial Leads | |
BSI05810020DR26 | VISHAY |
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Molded and Insulated Wirewound Power Resistors Axial Leads | |
BSI05810020FR17 | VISHAY |
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Molded and Insulated Wirewound Power Resistors Axial Leads |