Datasheet > BSH205G2A

BSH205G2A

更新时间： 2024-09-30 14:52:43

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
15页	272K
描述
20 V, P-channel Trench MOSFETProduction

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BSH205G2A 数据手册

BSH205G2A

20 V, P-channel Trench MOSFET

13 October 2020

Product data sheet

1. General description

P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB)

Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2. Features and benefits

•

Low threshold voltage

•

Extended temperature range T_j= 175 °C

Trench MOSFET technology

Very fast switching

AEC-Q101 qualified

3. Applications

•

Relay driver

High-speed line driver

High-side load switch

Switching circuits

4. Quick reference data

Table 1. Quick reference data

Symbol

V_DS

Parameter

Conditions

Min

Typ

Max

-20

Unit

drain-source voltage

gate-source voltage

drain current

T_j= 25 °C

V_GS

-8

I_D

V_GS= -4.5 V; T_amb= 25 °C

[1]

-2.6

Static characteristics

R_DSondrain-source on-state

resistance

V_GS= -4.5 V; I_D= -2.6 A; T_j= 25 °C

118

mΩ

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 6 cm².

12 3 4 5 6 7...15

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