是否Rohs认证: | 符合 | 生命周期: | Transferred |
零件包装代码: | TO-236 | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
针数: | 3 | Reach Compliance Code: | compliant |
风险等级: | 5.66 | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 20 V | 最大漏极电流 (ID): | 2 A |
最大漏源导通电阻: | 0.17 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-236AB | JESD-30 代码: | R-PDSO-G3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | P-CHANNEL |
参考标准: | AEC-Q101; IEC-60134 | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BSH205T/R | NXP |
获取价格 |
TRANSISTOR 750 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Si | |
BSH206 | NXP |
获取价格 |
P-channel enhancement mode MOS transistor | |
BSH206/T3 | NXP |
获取价格 |
TRANSISTOR 750 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SC-88, 6 PIN, FET General Pu | |
BSH206T/R | NXP |
获取价格 |
TRANSISTOR 750 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SC-88, 6 PIN, FET General Pu | |
BSH207 | NXP |
获取价格 |
P-channel enhancement mode MOS transistor | |
BSH207,135 | NXP |
获取价格 |
BSH207 - P-channel vertical D-MOS logic level FET TSOP 6-Pin | |
BSH207/T3 | NXP |
获取价格 |
TRANSISTOR 1520 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SC-74, 6 PIN, FET General P | |
BSH299 | PHILIPS |
获取价格 |
Transistor | |
BSH299 | NXP |
获取价格 |
P-channel enhancement mode MOS transistor | |
BSH299115 | NXP |
获取价格 |
TRANSISTOR 200 mA, 50 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Si |