BSH206

更新时间： 2024-11-15 22:27:55

品牌	Logo	应用领域
恩智浦 - NXP		晶体晶体管
页数	文件大小	规格书
7页	147K
描述
P-channel enhancement mode MOS transistor

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BSH206 数据手册

Philips Semiconductors

Product specification

P-channel enhancement mode

MOS transistor

BSH206

FEATURES

SYMBOL

QUICK REFERENCE DATA

• Very low threshold voltage

• Fast switching

V_DS= -12 V

• Logic level compatible

• Subminiature surface mount

package

I_D= -0.75 A

_DS(ON)≤ 0.5 Ω (V_GS= -2.5 V)

V_GS(TO)≥ 0.4 V

GENERAL DESCRIPTION

PINNING

SOT363

P-channel, enhancement mode,

logic level, field-effect power

transistor. This device has low

threshold voltage and extremely

fast switching making it ideal for

battery powered applications and

high speed digital interfacing.

DESCRIPTION

1,2,5,6 drain

Top view

gate

source

The BSH206 is supplied in the

SOT363 subminiature surface

mounting package.

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V_DS

V_DGR

V_GS

I_D

Drain-source voltage

-12

± 8

-0.75

-0.47

-3

0.417

0.17

150

Drain-gate voltage

Gate-source voltage

Drain current (DC)

R_GS= 20 kΩ

T_a= 25 ˚C

T_a= 100 ˚C

T_a= 25 ˚C

T_a= 100 ˚C

I_DM

P_tot

Drain current (pulse peak value)

Total power dissipation

˚C

T_stg, T_j

Storage & operating temperature

- 55

THERMAL RESISTANCES

SYMBOL PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

R_{th j-a}

Thermal resistance junction to

ambient

FR4 board, minimum

footprint

300

K/W

August 1998

Rev 1.000

12 3 4 5 6 7

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