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BR24C21_11 PDF预览

BR24C21_11

更新时间: 2024-09-13 08:59:19
品牌 Logo 应用领域
罗姆 - ROHM 存储
页数 文件大小 规格书
23页 647K
描述
EDID Memory (For display)

BR24C21_11 数据手册

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Memory for Plug & Play  
EDID Memory  
(For display)  
BR24C21,BR24C21F,BR24C21FJ,BR24C21FV,  
BU9882-W,BU9882F-W,BU9882FV-W  
No.11002ECT02  
BR24C21,BR24C21F,BR24C21FJ,BR24C21FV  
Description  
BR24C21F,BR24C21FJ,BR24C21FV are serial EEPROMs that support DDC1TM/DDC2TM interfaces  
for Plug and Play displays.  
Features  
1) Compatible with both DDC1TM/DDC2TM  
2) Operating voltage range: 2.5V to 5.5V  
3) Page write function: 8bytes  
4) Low power consumption  
Active (at 5V)  
: 1.5mA (typ)  
Stand-by (at 5V) : 0.1µA (typ)  
5) Address auto increment function during Read operation  
6) Data security  
Write enable feature (VCLK)  
Write protection at low Vcc  
7) Various packages available: DIP-T8(BR24C21) / SOP8(BR24C21F) / SOP-J8(BR24C21FJ) / SSOP-B8(BR24C21FV)  
8) Initial data=FFh  
9) Data retention: 10years  
10) Rewriting possible up to 100,000 times  
Absolute maximum ratings (Ta=25)  
Parameter  
Supply Voltage  
Symbol  
VCC  
Rating  
-0.3+6.5  
Unit  
V
*1  
*2  
*3  
*4  
800 (DIP-T8)  
450 (SOP8)  
450 (SOP-J8)  
350 (SSOP-B8)  
-65+125  
Power Dissipation  
Pd  
mW  
Storage Temperature  
Operating Temperature  
Terminal Voltage  
Tstg  
Topr  
-
V
-40+85  
-0.3VCC+0.3  
* Reduce by 8.0 mW/C over 25C (*1), 4.5mW/(*2,3), and 3.5mW/(*4)  
Memory cell characteristics  
Parameter  
Supply Voltage  
Input Voltage  
Symbol  
VCC  
VIN  
Rating  
2.55.5  
0VCC  
Unit  
V
V
Recommended operating conditions  
Limits  
Typ.  
-
Parameter  
Unit  
Min.  
Max.  
Write/Erase Cycle  
Data Retention  
100,000  
-
-
Cycle  
Year  
10  
-
www.rohm.com  
2011.08 - Rev.C  
1/22  
© 2011 ROHM Co., Ltd. All rights reserved.  

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