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BR24C21-E2 PDF预览

BR24C21-E2

更新时间: 2024-09-13 19:47:23
品牌 Logo 应用领域
罗姆 - ROHM 可编程只读存储器电动程控只读存储器电可擦编程只读存储器光电二极管内存集成电路
页数 文件大小 规格书
17页 812K
描述
EEPROM, PDIP8, DIP-8

BR24C21-E2 技术参数

生命周期:Active零件包装代码:DIP
包装说明:,针数:8
Reach Compliance Code:compliant风险等级:5.78
JESD-30 代码:R-PDIP-T8内存集成电路类型:EEPROM
端子数量:8封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
认证状态:Not Qualified串行总线类型:I2C
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:DUALBase Number Matches:1

BR24C21-E2 数据手册

 浏览型号BR24C21-E2的Datasheet PDF文件第2页浏览型号BR24C21-E2的Datasheet PDF文件第3页浏览型号BR24C21-E2的Datasheet PDF文件第4页浏览型号BR24C21-E2的Datasheet PDF文件第5页浏览型号BR24C21-E2的Datasheet PDF文件第6页浏览型号BR24C21-E2的Datasheet PDF文件第7页 
TECHNICAL NOTE  
Double-cell Memory for Plug & Play  
EDID Memory  
BR24C21/F/FJ/FV, BU9882/F/FV-W  
BR24C21/F/FJ/FV  
Description  
The BR24C21 series ICs are serial EEPROMs that support DDC1TM/DDC2TM interfaces for Plug and Play displays.  
Features  
1) Compatible with both DDC1TM/DDC2TM  
2) Operating voltage range: 2.5V to 5.5V  
3) Page write function: 8bytes  
4) Low power consumption  
Active (at 5V)  
: 1.5mA (typ)  
Stand-by (at 5V) : 0.1μA (typ)  
5) Address auto increment function during Read operation  
6) Data security  
Write enable feature (VCLK)  
Write protection at low Vcc  
7) Various packages available: DIP-T8 / SOP8 / SOP-J8 / SSOP-B8  
8) Initial data=FFh  
9) Data retention: 10years  
10) Rewriting possible up to 100,000 times  
Absolute maximum ratings (Ta=25)  
Recommended operating conditions  
Parameter  
Symbol  
VCC  
Rating  
-0.3+6.5  
Unit  
V
Parameter  
Supply Voltage  
Input Voltage  
Symbol  
VCC  
Rating  
2.55.5  
0VCC  
Unit  
V
Supply Voltage  
800 (DIP-T8)  
450 (SOP8)  
450 (SOP-J8)  
*1  
*2  
*3  
VIN  
V
Power Dissipation  
Pd  
mW  
350 (SSOP-B8) *4  
Storage  
Temperature  
Operating  
Temperature  
Terminal Voltage  
Tstg  
-65+125  
Memory cell characteristics  
Topr  
-
-40+85  
Limits  
Typ. Max.  
Parameter  
Min.  
Unit  
-0.3VCC+0.3  
V
Write/Erase Cycle  
Data Retention  
100,000  
10  
-
-
-
-
Cycle  
Year  
* Reduce by 8.0 mW/°C over 25°C (*1), 4.5mW/(*2,3), and 3.5mW/(*4)  
Ver.B Oct.2005  

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