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BR24C21F-E1 PDF预览

BR24C21F-E1

更新时间: 2024-11-01 21:05:35
品牌 Logo 应用领域
罗姆 - ROHM 可编程只读存储器电动程控只读存储器电可擦编程只读存储器光电二极管内存集成电路
页数 文件大小 规格书
11页 661K
描述
EEPROM, 128X8, Serial, CMOS, PDSO8

BR24C21F-E1 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SOP, SOP8,.25Reach Compliance Code:compliant
风险等级:5.61数据保留时间-最小值:10
耐久性:100000 Write/Erase CyclesI2C控制字节:1010XXXR
JESD-30 代码:R-PDSO-G8内存密度:1024 bit
内存集成电路类型:EEPROM内存宽度:8
端子数量:8字数:128 words
字数代码:128最高工作温度:85 °C
最低工作温度:-40 °C组织:128X8
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装等效代码:SOP8,.25封装形状:RECTANGULAR
封装形式:SMALL OUTLINE并行/串行:SERIAL
电源:3/5 V认证状态:Not Qualified
串行总线类型:I2C最大待机电流:0.0001 A
子类别:EEPROMs最大压摆率:0.003 mA
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
Base Number Matches:1

BR24C21F-E1 数据手册

 浏览型号BR24C21F-E1的Datasheet PDF文件第2页浏览型号BR24C21F-E1的Datasheet PDF文件第3页浏览型号BR24C21F-E1的Datasheet PDF文件第4页浏览型号BR24C21F-E1的Datasheet PDF文件第5页浏览型号BR24C21F-E1的Datasheet PDF文件第6页浏览型号BR24C21F-E1的Datasheet PDF文件第7页 
BR24C21 / BR24C21F / BR24C21FJ / BR24C21FV  
Memory ICs  
ID ROM for CRT display  
BR24C21 / BR24C21F / BR24C21FJ / BR24C21FV  
The BR24C21 series are 1kbits serial EEPROMs and support DDC1TM and DDC2TM interfaces for PLUG&PLAY  
displays.  
!Features  
1) 128 x 8 bits serial EEPROM  
2) Operating voltage range (2.5V5.5V)  
3) Completely implements DDC1TM / DDC2TM interface  
for monitor identification  
6) DATA security  
Write enable feature  
Inhibit to WRITE at low Vcc  
7) Compact packages  
Transmit-Only Mode  
Recovery Mode  
Bi-directional Mode  
8) High reliability fine pattern CMOS technology  
9) Rewriting possible up to 100,000 times  
10) Data can be stored for ten years without corruption  
11) Noise filters at SCL, SDA and VCLK pins  
4) Page write function : 8 bytes  
5) Low current consumption  
Active (at 5V) : 1.5mA (Typ.)  
Standby (at 5V) : 10µA (Typ.)  
!Absolute maximum ratings (Ta=25°C)  
Parameter  
Supply voltage  
Symbol  
Limits  
Unit  
VCC  
0.3~  
+6.5  
V
800(DIP8)  
1  
2  
450(SOP8)  
450(SOP-J8)  
350(SSOP-B8)  
Power disssipation  
Pd  
mW  
2  
3  
°C  
°C  
V
Storage temperature range  
Operating temperature range  
Terminal voltage  
Tstg  
Topr  
65  
40  
0.3  
~+125  
~
+85  
~
V
CC+0.3  
1 Degradation is done at 8.0mW/°C for operation above 25°C.  
2 Degradation is done at 4.5mW/°C for operation above 25°C.  
3 Degradation is done at 3.5mW/°C for operation above 25°C.  
!Recommended operating conditions (Ta=25°C)  
Parameter  
Supply voltage  
Input voltage  
Symbol  
Limits  
2.5 5.5  
Unit  
V
V
CC  
IN  
~
V
0~  
V
CC  
V

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