Datasheet > BLP7G22-05Z

BLP7G22-05Z

更新时间： 2024-11-18 22:07:43

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描述
RF FET LDMOS 65V 16DB 12VDFN

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BLP7G22-05Z 数据手册

BLP7G22-05

LDMOS driver transistor

Rev. 3 — 1 September 2015

Product data sheet

1. Product profile

1.1 General description

A 5 W plastic LDMOS power transistor for base station applications from

700 MHz to 2700 MHz band.

Table 1.

Application information

Typical RF performance at T_case= 25 C; in a class-AB application circuit.

Test signal

I_Dq

(mA)

V_DS

(V)

P_L(AV)

G_p

_D

(%)

ACPR

(dBc)

41

40

(MHz)

788

2140

2700

(W)

(dB)

23.9

16.7

14.5

IS-95 ^[1]

2-carrier W-CDMA ^[2]

Pulsed CW

[1] Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at

0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz.

[2] Test signal: 2-carrier W-CDMA: carrier spacing = 5 MHz. PAR = 8.4 dB at 0.01% probability on CCDF;

RF performance at V_DS= 28 V; I_Dq= 55 mA.

1.2 Features and benefits

 High efficiency

 Excellent ruggedness

 Designed for broadband operation

 Excellent thermal stability

 High power gain

 Integrated ESD protection

 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

1.3 Applications

 CDMA

 W-CDMA

 GSM EDGE

 MC-GSM

 LTE

 WiMAX

12 3 4 5 6 7...11

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