Datasheet > BLP9G0722-20GZ

BLP9G0722-20GZ

更新时间： 2024-02-21 11:03:48

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
20页	1798K
描述
RF MOSFET LDMOS 28V SOT1482-1

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BLP9G0722-20GZ 数据手册

BLP9G0722-20;

BLP9G0722-20G

Power LDMOS transistor

Rev. 3 — 26 February 2018

Product data sheet

1. Product profile

1.1 General description

20 W plastic LDMOS power transistor for base station applications at frequencies from

100 MHz to 2700 MHz.

Table 1.

Application performance (multiple frequencies)

Typical RF performance at T_case= 25 C; I_Dq= 180 mA; in a class-AB demo board, tested on

gull wing lead device.

Test signal

I_Dq

V_DSP_L(AV)

G_p

_D

ACPR_5M

(MHz)

(mA)

180

(V)

(dBm)

(dB) (%) (dBc)

1-carrier W-CDMA

400 to 430

728 to 768

1805 to 1880

2110 to 2170

2300 to 2400

2570 to 2620

25.5

45 ^[1]

17.3

[1] Test signal: 3GPP test model 1; 64 DCHP; PAR = 7.2 dB at 0.01 % probability on CCDF.

1.2 Features and benefits

 High efficiency

 Excellent ruggedness

 Designed for broadband operation

 Excellent thermal stability

 High power gain

 Integrated ESD protection

 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

1.3 Applications

 FDD/TDD LTE

 W-CDMA

 MC-GSM

 WiMAX

 GSM EDGE

 CDMA

12 3 4 5 6 7...20

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