Datasheet > BLP9LA25S

BLP9LA25S

更新时间： 2024-11-21 17:14:59

品牌	Logo	应用领域
安谱隆 - AMPLEON		/
页数	文件大小	规格书
24页	2195K
描述
Power LDMOS transistor

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BLP9LA25S 数据手册

BLP9LA25S; BLP9LA25SG

Power LDMOS transistor

Rev. 3 — 12 January 2023

Product data sheet

1. Product profile

1.1 General description

This 13.6 V 25 W device is designed for land mobile radio (LMR) applications supporting

the frequency range from HF up to 941 MHz.

Table 1.

Application performance

Typical RF performance at T_case= 25 C; V_DS= 13.6 V; in a class-AB demo circuit.

Test signal

I_Dq

P_L(AV)

(W)

G_p

_D

RL_in

(dB)

7.3

15

(MHz)

(mA)

(dB)

>16.5

18.4

>15.7

>14.2

(%)

380 to 460

520

>49.0

72.0

>61.5

>64.7

740 to 800

800 to 870

100

5.7

5.3

1.2 Features and benefits

 High efficiency

 Integrated dual sided ESD protection

 Extreme ruggedness 65 : 1

 High power gain

 Excellent reliability

 Wideband

 High linearity

 For RoHS compliance see the product details on the Ampleon website

1.3 Applications

 TETRA, SSB and LTE mobile radio applications in VHF and UHF bands

 Wideband radio application, frequency range from 380 MHz to 460 MHz and from

800 MHz to 870 MHz

12 3 4 5 6 7...24

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