Datasheet > BLP9H10-30G

BLP9H10-30G

更新时间： 2024-11-18 17:15:39

品牌	Logo	应用领域
安谱隆 - AMPLEON		/
页数	文件大小	规格书
15页	1173K
描述
Power LDMOS transistor

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数据手册

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BLP9H10-30G 数据手册

BLP9H10-30G

Power LDMOS transistor

Rev. 1 — 20 July 2018

Product data sheet

1. Product profile

1.1 General description

30 W plastic LDMOS power transistor for base station applications at frequencies from

616 MHz to 960 MHz.

Table 1.

Typical performance 806 MHz

Typical RF performance at T_case= 25 °C in a class-AB demo circuit. V_DS= 50 V; I_Dq= 100 mA.

Test signal

V_DS

(V)

P_L

(dBm) (dB)

32 19.5

G_p

η_D

ACPR

(dBc)

47.3 ^[1]

(MHz)

(%)

13.8

1-carrier W-CDMA

791 to 821

[1] Test signal: 1-carrier W-CDMA; 3GPP test model 1; 64 DPCH; PAR = 9.9 dB at 0.01 % probability on

CCDF.

Table 2.

Typical performance 681 MHz

Typical RF performance at T_case= 25 °C in a class-AB demo circuit. V_DS= 50 V; I_Dq= 100 mA.

Test signal

V_DS

(V)

P_L

(dBm) (dB)

32 20.2

G_p

η_D

ACPR

(dBc)

49.4 ^[1]

(MHz)

(%)

15.1

1-carrier W-CDMA

616 to 746

[1] Test signal: 1-carrier W-CDMA; 3GPP test model 1; 64 DPCH; PAR = 9.9 dB at 0.01 % probability on

CCDF.

Table 3.

Typical performance 881.5 MHz

Typical RF performance at T_case= 25 °C in a class-AB demo circuit. V_DS= 50 V; I_Dq= 100 mA.

Test signal

V_DS

(V)

P_L

(dBm) (dB)

31 18.7

G_p

η_D

ACPR

(dBc)

51.1 ^[1]

(MHz)

(%)

12.7

1-carrier W-CDMA

758 to 960

[1] Test signal: 1-carrier W-CDMA; 3GPP test model 1; 64 DPCH; PAR = 9.9 dB at 0.01 % probability on

CCDF.

1.2 Features and benefits

 High efficiency

 Excellent ruggedness

 Designed for broadband operation

 Excellent thermal stability

 High power gain

 Integrated ESD protection

 For RoHS compliance see the product details on the Ampleon website

12 3 4 5 6 7...15

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