Datasheet > BLP8G10S-45PGJ

BLP8G10S-45PGJ

更新时间： 2024-11-20 22:07:47

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
16页	1560K
描述
TRANS LDMOS 45W 4HSOP

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替代型号

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BLP8G10S-45PGJ 数据手册

BLP8G10S-45P;

BLP8G10S-45PG

Power LDMOS transistor

Rev. 4 — 29 October 2018

Product data sheet

1. Product profile

1.1 General description

The BLP8G10S-45P and BLP8G10S-45PG are dual path, 45 W LDMOS power

transistors for base station applications at frequencies from 700 MHz to 1000 MHz.

Table 1.

Application performance

Typical RF performance at T_case= 25 °C; I_Dq= 224 mA in common source class-AB production

circuit.

Test signal

V_DS

(V)

P_L(AV)

(W)

G_p

η_D

ACPR

(dBc)

49 ^[1]

(MHz)

960

(dB)

20.8

(%)

19.8

2-carrier W-CDMA

2.5

[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8.4 dB at 0.01% probability on CCDF;

carrier spacing = 5 MHz; per section unless otherwise specified.

1.2 Features and benefits

 High efficiency

 Excellent ruggedness

 Designed for broadband operation (700 MHz to 1000 MHz)

 Excellent thermal stability

 High power gain

 Integrated ESD protection

 For RoHS compliance see the product details on the Ampleon website

1.3 Applications

 W-CDMA

 LTE

 GSM

12 3 4 5 6 7...16

中文翻译

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BLP8G10S-45PGJ 替代型号

型号	品牌	替代类型	描述	数据表
BLP8G10S-45PGY	NXP	类似代替	RF FET LDMOS 65V 20.8DB 4BESOP

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