Datasheet > BLP8G27-10Z

BLP8G27-10Z

更新时间： 2024-11-18 22:07:47

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
12页	1189K
描述
RF FET LDMOS 65V 17DB 16VDFN

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BLP8G27-10Z 数据手册

BLP8G27-10

Power LDMOS transistor

Rev. 2 — 1 September 2015

Product data sheet

1. Product profile

1.1 General description

10 W plastic LDMOS power transistor for base station applications at frequencies from

700 MHz to 2700 MHz.

Table 1.

Application performance (multiple frequencies)

Typical RF performance at T_case= 25 C; I_Dq= 110 mA; in a class-AB application circuit.

Test signal

I_Dq

V_DS

(V)

P_L(AV)

(dBm)

G_p

_D

(%)

ACPR_5M

(dBc)

(MHz)

2700

(mA)

110

(dB)

Pulsed CW

2-carrier W-CDMA ^[1]

47.3

[1] Test signal: 2-carrier W-CDMA; carrier spacing = 5 MHz. PAR = 8.4 dB at 0.01 % probability on CCDF.

1.2 Features and benefits

 High efficiency

 Excellent ruggedness

 Designed for broadband operation

 Excellent thermal stability

 High power gain

 Integrated ESD protection

 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

1.3 Applications

 CDMA

 W-CDMA

 GSM EDGE

 MC-GSM

 LTE

 WiMAX

12 3 4 5 6 7...12

中文翻译

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