Datasheet > BLP8G21S-160PVY

BLP8G21S-160PVY

更新时间： 2024-11-18 22:07:47

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
11页	994K
描述
RF FET LDMOS 65V 17DB SOT12211

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BLP8G21S-160PVY 数据手册

BLP8G21S-160PV

Power LDMOS transistor

Rev. 5 — 28 September 2015

Product data sheet

1. Product profile

1.1 General description

160 W LDMOS transistor for base station applications at frequencies from 1880 MHz to

2025 MHz.

Table 1.

Typical performance

Typical RF performance per section at T_case= 25 C in a common source class-AB production test

circuit.

Test signal

I_Dq

V_DS

(V)

P_L(AV)

(W)

G_p

_D

(%) (dBc)

30 ^[1]

ACPR

(MHz)

(mA)

600

(dB)

17.5

2-carrier W-CDMA

1880 to 1920

[1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF;

carrier spacing = 5 MHz.

1.2 Features and benefits

 Designed for broadband operation (1880 MHz to 2025 MHz)

 Decoupling leads to enable improved video bandwidth

 Excellent ruggedness

 High efficiency

 Excellent thermal stability

 Internally matched for ease of use

 High power gain

 Integrated ESD protection

 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

1.3 Applications

 RF power amplifiers for base station and multi-carrier applications in the 1880 MHz to

2025 MHz frequency range

12 3 4 5 6 7...11

中文翻译

下载PDF

与BLP8G21S-160PVY相关器件

型号	品牌	获取价格	描述	数据表
BLP8G27-10Z	ETC	获取价格	RF FET LDMOS 65V 17DB 16VDFN
BLP8G27-5Z	ETC	获取价格	RF FET LDMOS 65V 18DB 16VDFN
BLP-90	MINI	获取价格	Low Pass Filter, 90MHz, CASE FF55
BLP-90+	MINI	获取价格	Low Pass Filter, 90MHz, ROHS COMPLIANT, CASE FF55
BLP9G0722-20G	AMPLEON	获取价格	Power LDMOS transistor
BLP9G0722-20GZ	ETC	获取价格	RF MOSFET LDMOS 28V SOT1482-1
BLP9G0722-20Z	ETC	获取价格	RF MOSFET LDMOS 28V SOT1482-1
BLP9H10-30G	AMPLEON	获取价格	Power LDMOS transistor
BLP9H10S-350A	AMPLEON	获取价格	Power LDMOS transistor
BLP9H10S-500AWT	AMPLEON	获取价格	Power LDMOS transistor