Datasheet > BLP8G21S-160PVY

BLP8G21S-160PVY

更新时间： 2024-09-25 22:07:47

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描述
RF FET LDMOS 65V 17DB SOT12211

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BLP8G21S-160PVY 数据手册

BLP8G21S-160PV

Power LDMOS transistor

Rev. 5 — 28 September 2015

Product data sheet

1. Product profile

1.1 General description

160 W LDMOS transistor for base station applications at frequencies from 1880 MHz to

2025 MHz.

Table 1.

Typical performance

Typical RF performance per section at T_case= 25 C in a common source class-AB production test

circuit.

Test signal

I_Dq

V_DS

(V)

P_L(AV)

(W)

G_p

_D

(%) (dBc)

30 ^[1]

ACPR

(MHz)

(mA)

600

(dB)

17.5

2-carrier W-CDMA

1880 to 1920

[1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF;

carrier spacing = 5 MHz.

1.2 Features and benefits

 Designed for broadband operation (1880 MHz to 2025 MHz)

 Decoupling leads to enable improved video bandwidth

 Excellent ruggedness

 High efficiency

 Excellent thermal stability

 Internally matched for ease of use

 High power gain

 Integrated ESD protection

 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

1.3 Applications

 RF power amplifiers for base station and multi-carrier applications in the 1880 MHz to

2025 MHz frequency range

12 3 4 5 6 7...11

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