Datasheet > BLP7G22-10Z

BLP7G22-10Z

更新时间： 2024-02-01 14:06:42

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
15页	1181K
描述
RF FET LDMOS 65V 16DB 12VDFN

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BLP7G22-10Z 数据手册

BLP7G22-10

LDMOS driver transistor

Rev. 3 — 1 September 2015

Product data sheet

1. Product profile

1.1 General description

10W plastic LDMOS power transistor for base station applications at frequencies from

700 MHz to 2700 MHz.

Table 1.

Application performance (multiple frequencies)

Typical RF performance at T_case= 25 C; I_Dq= 110 mA; in a class-AB application circuit.

Test signal

I_Dq

V_DS

(V)

P_L(AV)

(W)

G_p

_D

ACPR_5M

(dBc)

43 ^[1]

40

(MHz)

2700

748

(mA)

110

(dB)

14.5

27.5

17.4

(%)

Pulsed CW

1-carrier W-CDMA

0.7

13.5

748

2-carrier W-CDMA

2140

0.7

51

40

[1] Test signal: 2-carrier W-CDMA; carrier spacing = 5 MHz; PAR = 8.4 dB at 0.01 % probability on CCDF;

RF performance at V_DS= 28 V; I_Dq= 110 mA.

1.2 Features and benefits

 High efficiency

 Excellent ruggedness

 Designed for broadband operation

 Excellent thermal stability

 High power gain

 Integrated ESD protection

 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

1.3 Applications

 CDMA

 W-CDMA

 GSM EDGE

 MC-GSM

 LTE

 WiMAX

12 3 4 5 6 7...15

中文翻译

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