Datasheet > BLP8G05S-200Y

BLP8G05S-200Y

更新时间： 2024-11-18 22:07:47

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
12页	1023K
描述
RF FET LDMOS 65V 21DB SOT11382

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BLP8G05S-200Y 数据手册

BLP8G05S-200;

BLP8G05S-200G

Power LDMOS transistor

Rev. 2 — 1 October 2015

Product data sheet

1. Product profile

1.1 General description

200 W LDMOS power transistor for base stations applications at frequencies from

400 MHz to 500 MHz.

Table 1.

Typical performance

RF performance at T_case= 25 C, I_Dq= 2 mA in an application circuit.

Test signal

V_DS

(V)

P_L(AV)

(W)

G_p

_D

(MHz)

440

(dB)

(%)

210

1.2 Features and benefits

 High efficiency

 Excellent ruggedness

 Excellent thermal stability

 Integrated ESD protection

 Easy power control

 Designed for ISM operation (400 MHz to 500 MHz)

 Input integration for simple board design

 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

1.3 Applications

 RF power amplifiers for W-CDMA base stations and multi carrier applications in the

400 MHz to 500 MHz frequency range

12 3 4 5 6 7...12

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