Datasheet > BLP7G07S-140P

BLP7G07S-140P

更新时间： 2024-01-26 20:50:06

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
11页	156K
描述
Power LDMOS transistor

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BLP7G07S-140P 数据手册

BLP7G07S-140P

Power LDMOS transistor

Rev. 3 — 29 March 2013

Product data sheet

1. Product profile

1.1 General description

140 W LDMOS power transistor for base station applications at frequencies from

700 MHz to 1000 MHz.

Table 1.

Typical performance

Test signal

V_DS

(V)

P_L(AV)

(W)

G_p

_D

ACPR_5M

(dBc)

36.3 ^[1]

35.5 ^[1]

(MHz)

(dB)

20.9

20.2

(%)

29.6

29.0

2-carrier W-CDMA

724 to 769

790 to 821

[1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier

spacing 5 MHz.

1.2 Features and benefits

 Integrated ESD protection

 Excellent ruggedness

 High efficiency

 Excellent thermal stability

 Designed for broadband operation (700 MHz to 1000 MHz)

 Internally matched for ease of use

 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

1.3 Applications

 RF power amplifiers for W-CDMA base stations and multi carrier applications in the

700 MHz to 1000 MHz frequency range.

12 3 4 5 6 7...11

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