Datasheet > BLG10T65FUL

BLG10T65FUL

更新时间： 2023-12-06 20:01:50

品牌	Logo	应用领域
上海贝岭 - BELLING		双极性晶体管
页数	文件大小	规格书
9页	595K
描述
BLG10T65FUL is obtained by advanced Trench Field Stop (T-FS) technology which is characteristic with low VCE(sat), optimized switching performance and low gate charge Qg. The IGBT is suitable device for BLDC, UPS, and low VCE(sat) applications.

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BLG10T65FUL 数据手册

BLG10T65FUL

IGBT

1．Description

BLG10T65FUL is obtained by advanced

Trench Field Stop (T-FS) technology which is

characteristic with low V_CE(sat), optimized switching

performance and low gate charge Q_g. This is

suitable device for PFC、UPS and low V_CE(sat)

applications.

KEY CHARACTERISTICS

Parameter

V_CES

I_C

Value

650

Unit

V_CE(sat).typ

P_D(T_C=25℃)

FEATURES

1.4

⚫

Fast Switching

Low V_CE(sat)

Positive temperature coefficient

Very soft, fast recovery anti-parallel diode

RoHS product

TO-252-2

APPLICATIONS

⚫

UPS

Air condition

PFC

ORDERING INFORMATION

Ordering Codes

BLG10T65FUL-D

Package

TO-252

Product Code

G10T65FUL

Packing

Reel

BLG10T65FUL-D

XXXX：Product Code

(2) Package type

(1) Chip name

XXXX

YYWW ZZ

SSSSS

YYWW：Year & Week

ZZ：Assembly Code

SSSSS：Lot Code

(1) BLG10T65FUL:650V 10A

(2) D:TO-252

BLG10T65FUL

Pre-alpha

12/2021

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