Datasheet > BLG15T65FUA

BLG15T65FUA

更新时间： 2023-12-06 20:08:12

品牌	Logo	应用领域
上海贝岭 - BELLING		双极性晶体管功率因数校正
页数	文件大小	规格书
16页	990K
描述
BLG15T65FUA is obtained by advanced Trench Field Stop (T-FS) technology which is characteristic in best trade-off with Vce-Eoff, optimized swiching performance and low gate Qg. The IGBT is suitable device for BLDC, UPS, and PFC.

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BLG15T65FUA 数据手册

BLG15T65FUA

IGBT

1．Description

BLG15T65FUA is obtained by advanced

Trench Field Stop (T-FS) technology which is

characteristic with low V_CE(sat), optimized switching

performance and low gate charge Q_g. The IGBT is

suitable device for BLDC, UPS, and high switching

frequency applications.

KEY CHARACTERISTICS

Parameter

V_CES

I_C

Value

650

Unit

V_CE(sat).typ

FEATURES

1.55

⚫

Fast Switching

Low V_CE(sat)

Positive temperature coefficient

Fast recovery anti-parallel diode

RoHS product

APPLICATIONS

⚫

BLDC

UPS

Motor drives

Portable power

ORDERING INFORMATION

Device Marking

Ordering Codes

Package

Product Code Packing

BLG15T65FUA-A

BLG15T65FUA-B

BLG15T65FUA-P

TO-220F

TO-263

TO-220

G15T65FUA

Tube

Reel

Tube

15T65FUA

BLG15T65FUA-A/B/P

XXXX：Product Code

(2) Package type

(1) Chip name

XXXX

YYWW ZZ

SSSSS

YYWW：Year & Week

ZZ：Assembly Code

SSSSS：Lot Code

(1) BLG15T65FUA: 650V 15A

(2) A:TO-220F

B:TO-263

P:TO-220

BLG15T65FUA

Rev4.0

02/2023

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