Datasheet > BLA6H0912-500,112

BLA6H0912-500,112

更新时间： 2024-01-15 22:21:15

品牌	Logo	应用领域
恩智浦 - NXP		局域网放大器晶体管
页数	文件大小	规格书
14页	128K
描述
BLA6H0912-500

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技术参数
数据手册

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BLA6H0912-500,112 技术参数

是否Rohs认证：	符合	生命周期：	Active
零件包装代码：	DFM	包装说明：	ROHS COMPLIANT, CERAMIC PACKAGE-2
针数：	2	Reach Compliance Code：	compliant
风险等级：	5.4	Base Number Matches：	1

BLA6H0912-500,112 数据手册

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BLA6H0912-500

LDMOS avionics radar power transistor

Rev. 04 — 10 May 2010

Product data sheet

1. Product profile

1.1 General description

500 W LDMOS power transistor intended for avionics transmitter applications in the

960 MHz to 1215 MHz range such as Mode-S, TCAS, JTIDS, DME and TACAN.

Table 1.

Test information

Typical RF performance at T_case= 25 °C; t_p= 128 μs; δ = 10 %; I_Dq= 100 mA; in a class-AB

production test circuit.

Mode of operation

V_DS

(V)

P_L

G_p

η_D

t_r

t_f

(MHz)

(W)

450

(dB)

(%)

(ns)

pulsed RF

960 to 1200

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken

during transport and handling.

1.2 Features and benefits

Typical pulsed RF performance at a frequency of 960 MHz to 1215 MHz, a supply

voltage of 50 V, an I_Dqof 100 mA, a t_pof 128 μs with δ of 10 %:

Output power = 450 W

Power gain = 17 dB

Efficiency = 50 %

Easy power control

Integrated ESD protection

High flexibility with respect to pulse formats

Excellent ruggedness

High efficiency

Excellent thermal stability

Designed for broadband operation (960 MHz to 1215 MHz)

Internally matched for ease of use

Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

12 3 4 5 6 7...14

中文翻译

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