Datasheet > BLA6H1011-600,112

BLA6H1011-600,112

更新时间： 2024-01-29 22:30:42

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描述
RF FET LDMOS 100V 17DB SOT539A

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BLA6H1011-600

LDMOS avionics power transistor

Rev. 02 — 1 September 2015

Product data sheet

1. Product profile

1.1 General description

600 W LDMOS pulsed power transistor intended for TCAS and IFF applications in the

1030 MHz to 1090 MHz range.

Table 1.

Test information

Typical RF performance at T_case= 25 C; t_p= 50 s;  = 2 %; I_Dq= 100 mA; in a class-AB production

test circuit.

Mode of operation

V_DS

(V)

P_L

G_p

_D

t_r

t_f

(MHz)

(W)

600

(dB)

(%)

(ns)

pulsed RF

1030 to 1090

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken

during transport and handling.

1.2 Features and benefits

 Typical pulsed RF performance at a frequency of 1030 MHz to 1090 MHz, a supply

voltage of 48 V, an I_Dqof 100 mA, a t_pof 50 s with  of 2 %:

 Output power = 600 W

 Power gain = 17 dB

 Efficiency = 52 %

 Easy power control

 Integrated ESD protection

 High flexibility with respect to pulse formats

 Excellent ruggedness

 High efficiency

 Excellent thermal stability

 Designed for broadband operation (1030 MHz to 1090 MHz)

 Internally matched for ease of use

 Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances

(RoHS)

12 3 4 5 6 7...13

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