Datasheet > BLA8H0910LS-500U

BLA8H0910LS-500U

更新时间： 2024-11-18 22:07:43

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描述
RF MOSFET LDMOS 50V SOT502B

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BLA8H0910LS-500U 数据手册

BLA8H0910L-500;

BLA8H0910LS-500

Power LDMOS transistor

Rev. 1 — 7 February 2017

Product data sheet

1. Product profile

1.1 General description

A 500 W LDMOS power transistor for avionics applications at frequencies from 900 MHz

to 930 MHz.

The BLA8H0910L-500 and BLA8H0910LS-500 are designed for high-power CW

applications and are assembled in high performance ceramic packages.

Table 1.

Typical performance

RF performance at V_DS= 50 V; I_Dq= 90 mA in a class-AB application circuit.

Test signal

V_DS

(V)

P_L

G_p

_D

(MHz)

915

(W)

500

(dB)

(%)

CW ^[1]

CW pulsed ^[2][3]

19.5

62.5

[1] T_case= 65 C.

[2] T_case= 25 C.

[3] t_p= 100 s;  = 10 %.

1.2 Features and benefits

 High efficiency

 Easy power control

 Excellent ruggedness

 Integrated ESD protection

 Designed for broadband operation (900 MHz to 930 MHz)

 Internally input matched

 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

1.3 Applications

 Avionics applications in the 900 MHz to 930 MHz frequency range

12 3 4 5 6 7...13

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