Datasheet > BLA9H0912L-1200P

BLA9H0912L-1200P

更新时间： 2024-10-02 17:14:59

品牌	Logo	应用领域
安谱隆 - AMPLEON		/
页数	文件大小	规格书
15页	1180K
描述
LDMOS avionics power transistor

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BLA9H0912L-1200P 数据手册

BLA9H0912L-1200P;

BLA9H0912LS-1200P(G)

LDMOS avionics power transistor

Rev. 2 — 10 January 2023

Product data sheet

1. Product profile

1.1 General description

1200 W LDMOS power transistor for avionics applications in the frequency range of

960 MHz to 1215 MHz.

Table 1.

Typical performance

Typical RF performance at T_case= 25 C; t_p= 50 s;  = 2 %; I_Dq= 75 mA; in a class-AB demo

circuit.

Test signal

V_DS

(V)

P_L

G_p

(dB)

_D

(%)

(MHz)

(W)

pulsed RF

1030

1200

1050

pulsed RF at 1 dB

compression

960 to 1215

1.2 Features and benefits

 High efficiency

 Excellent ruggedness

 Designed for avionics band operation

 Excellent thermal stability

 Easy power control

 Integrated dual sided ESD protection enables excellent off-state isolation

 High flexibility with respect to pulse formats

 Internally matched for ease of use

 For RoHS compliance see the product details on the Ampleon website

1.3 Applications

 Avionics applications in the frequency range of 960 MHz to 1215 MHz

12 3 4 5 6 7...15

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