Datasheet > BLA9H0912L-250G

BLA9H0912L-250G

更新时间： 2024-10-02 17:14:59

品牌	Logo	应用领域
安谱隆 - AMPLEON		/
页数	文件大小	规格书
14页	1253K
描述
LDMOS avionics power transistor

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BLA9H0912L-250G 数据手册

BLA9H0912L-250(G);

BLA9H0912LS-250(G)

LDMOS avionics power transistor

Rev. 1 — 14 June 2019

Product data sheet

1. Product profile

1.1 General description

250 W LDMOS power transistor for avionics applications in the frequency range from

960 MHz to 1215 MHz.

Table 1.

Typical information

Typical RF performance at T_case= 25 C; t_p= 50 s;  = 2 %; I_Dq= 100 mA; in a class-AB demo

circuit.

Test signal

V_DS

(V)

P_L

G_p

_D

(MHz)

1030

(W)

250

(dB)

(%)

pulsed RF

1.2 Features and benefits

 High efficiency

 Excellent ruggedness

 Designed for avionics band operation

 Excellent thermal stability

 Easy power control

 Integrated dual sided ESD protection enables excellent off-state isolation

 High flexibility with respect to pulse formats

 Internally matched for ease of use

 For RoHS compliance see the product details on the Ampleon website

1.3 Applications

 Avionics transmitter applications in the frequency range from 960 MHz to 1215 MHz

12 3 4 5 6 7...14

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