Datasheet > BLA6H0912L-1000U

BLA6H0912L-1000U

更新时间： 2024-11-18 22:07:43

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
13页	963K
描述
RF FET LDMOS 100V 15.5DB SOT539A

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BLA6H0912L-1000U 数据手册

BLA6H0912L-1000;

BLA6H0912LS-1000

LDMOS avionics power transistor

Rev. 5 — 1 September 2015

Product data sheet

1. Product profile

1.1 General description

1000W LDMOS pulsed power transistor intended for avionics transmitter applications in

the 960 MHz to 1215 MHz frequency range such as Mode-S, TCAS, JTIDS, DME and

TACAN.

Table 1.

Application information

Typical RF performance at T_case= 25 C; t_p= 50 s;  = 2 %; I_Dq= 200 mA; in a class-AB application

circuit.

Test signal

V_DS

(V)

P_L

G_p

_D

t_r

t_f

(MHz)

1030

(W)

1000

(dB)

(%)

(ns)

pulsed RF

1.2 Features and benefits

 Easy power control

 Integrated ESD protection

 High flexibility with respect to pulse formats

 Excellent ruggedness

 High efficiency

 Excellent thermal stability

 Designed for broadband operation (960 MHz to 1215 MHz)

 Internally matched for ease of use

 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

1.3 Applications

 1000 W LDMOS pulsed power transistor intended for Mode-S, TCAS, JTIDS, DME

and TACAN applications in the 960 MHz to 1215 MHz frequency range

12 3 4 5 6 7...13

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