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BLA6H0912LS-1000U PDF预览

BLA6H0912LS-1000U

更新时间: 2024-11-21 22:07:43
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其他 - ETC /
页数 文件大小 规格书
13页 963K
描述
RF FET LDMOS 100V 15.5DB SOT539B

BLA6H0912LS-1000U 数据手册

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BLA6H0912L-1000;  
BLA6H0912LS-1000  
LDMOS avionics power transistor  
Rev. 5 — 1 September 2015  
Product data sheet  
1. Product profile  
1.1 General description  
1000W LDMOS pulsed power transistor intended for avionics transmitter applications in  
the 960 MHz to 1215 MHz frequency range such as Mode-S, TCAS, JTIDS, DME and  
TACAN.  
Table 1.  
Application information  
Typical RF performance at Tcase = 25 C; tp = 50 s; = 2 %; IDq = 200 mA; in a class-AB application  
circuit.  
Test signal  
f
VDS  
(V)  
50  
PL  
Gp  
D  
tr  
tf  
(MHz)  
1030  
(W)  
1000  
(dB)  
16  
(%)  
52  
(ns)  
11  
(ns)  
5
pulsed RF  
1.2 Features and benefits  
Easy power control  
Integrated ESD protection  
High flexibility with respect to pulse formats  
Excellent ruggedness  
High efficiency  
Excellent thermal stability  
Designed for broadband operation (960 MHz to 1215 MHz)  
Internally matched for ease of use  
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances  
(RoHS)  
1.3 Applications  
1000 W LDMOS pulsed power transistor intended for Mode-S, TCAS, JTIDS, DME  
and TACAN applications in the 960 MHz to 1215 MHz frequency range  

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