Datasheet > BLA6H0912L-1000

BLA6H0912L-1000

更新时间： 2024-11-18 19:31:15

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
13页	180K
描述
RF POWER, FET

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技术参数
数据手册

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BLA6H0912L-1000 技术参数

生命周期：	Transferred	Reach Compliance Code：	unknown
风险等级：	5.74	Base Number Matches：	1

BLA6H0912L-1000 数据手册

BLA6H0912L-1000;

BLA6H0912LS-1000

LDMOS avionics power transistor

Rev. 1 — 4 November 2013

Objective data sheet

1. Product profile

1.1 General description

1000 W LDMOS pulsed power transistor intended for TCAS and IFF applications at

1030 MHz.

Table 1.

Test information

Typical RF performance at T_case= 25 C; t_p= 50 s;  = 2 %; I_Dq= 200 mA; in a class-AB production

test circuit.

Test signal

V_DS

(V)

P_L

G_p

_D

t_r

t_f

(MHz)

1030

(W)

1000

(dB)

(%)

(ns)

pulsed RF

1.2 Features and benefits

 Easy power control

 Integrated ESD protection

 High flexibility with respect to pulse formats

 Excellent ruggedness

 High efficiency

 Excellent thermal stability

 Designed for broadband operation (960 MHz to 1215 MHz)

 Internally matched for ease of use

 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

1.3 Applications

 1000 W LDMOS pulsed power transistor intended for TCAS and IFF applications in

the 1030 MHz to 1090 MHz frequency range

12 3 4 5 6 7...13

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