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BL24C512B PDF预览

BL24C512B

更新时间: 2023-12-06 20:06:30
品牌 Logo 应用领域
上海贝岭 - BELLING 存储
页数 文件大小 规格书
18页 445K
描述
BL24C512A提供524,288比特串行电可擦写存储器,组成65,536字节,每页128字节,共512页

BL24C512B 数据手册

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BL24C512B 512K bits (65536×8)  
Features  
Compatible with all I2C bidirectional data transfer  
protocol  
Memory array:  
512 Kbits (64 Kbytes) of EEPROM  
Page size: 128 bytes  
Additional Write lockable page  
Single supply voltage and high speed:  
1 MHz  
Random and sequential Read modes  
Write:  
Byte Write within 3 ms  
Page Write within 3 ms  
Partial Page Writes Allowed  
ECC (Error Correction Code)  
Write Protect Pin for Hardware Data Protection  
Schmitt Trigger, Filtered Inputs for Noise  
Suppression  
High-reliability  
Endurance: 4 Million Write Cycles  
Data Retention: 100 Years  
Enhanced ESD/Latch-up protection  
HBM 8000V  
8-lead PDIP/SOP/TSSOP/UDFN/TSOT23-5 and  
SOT23-5 packages  
Description  
The BL24C512B provides 524288 bits of serial  
electrically erasable and programmable read-only  
memory (EEPROM), organized as 65536 words of  
8 bits each.  
The device is optimized for use in many industrial  
and commercial applications where low-power and  
low-voltage operation are essential.  
The BL24C512B offers an additional page, named  
the Identification Page (128 bytes). The  
Identification Page can be used to store sensitive  
application parameters which can be (later)  
permanently locked in Read-only mode.  
Pin Configuration  
-lead PDIP  
-lead SOP  
-lead TSSOP  
A0  
A1  
8
VCC  
WP  
A0  
A1  
A2  
8
7
6
5
VCC  
WP  
A0  
A1  
8
7
6
5
VCC  
WP  
7
6
5
A2  
SCL  
SCL  
SDA  
A2  
SCL  
SDA  
GND  
SDA GND  
GND  
5-lead TSOT23-5  
-pad DFN  
5-lead SOT23-5  
WP  
VCC  
WP  
VCC  
VCC  
8
A0  
A1  
1
2
3
4
7 WP  
6 SCL  
A2  
SDA  
5
GND  
SCL  
GND  
SDA  
SCL  
GND  
SDA  
BL24C512B 512K bits (65536×8) Belling Proprietary Information. Unauthorized Photocopy and Duplication Prohibited  
©2020 Belling All Rights Reserved www.belling.com.cn  
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